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DEEP TRENCH RIE |
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°Ç½Ä ½Ä°¢ |
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Deep Trench RIE (ICP)
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- Silicon ½Ä°¢ Àü¿ëÀåºñ·Î 4ÀÎÄ¡,5ÀÎÄ¡,6ÀÎÄ¡ wafer °¡´É.
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- Á¶°¢ SampleÀÎ °æ¿ì 4inch wafer¿¡ ºÙ¿©¼ »ç¿ë°¡´É. |
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AOE Etcher (Pt,PZT) |
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AOE Etcher (Metal) |
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Pt, PZT Àü¿ë ½Ä°¢
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Á¶°¢ ~ 4inch Wafer |
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OxfordEtcher(ÈÇÕ¹°) |
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Oxford Etcher (ICP) |
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È¥ÇÕ¹° (Inp, AsGa, GaN,,,,,,,,,,) ¸ðµÎ ½Ä°¢ °¡´É.
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Metal ( Cr, Al, Au, Pt, Ti,,,,,,) ½Ä°¢ °¡´É
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Á¶°¢ ~ 6ÀÎÄ¡ wafer ¸ðµÎ °¡´É
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RIE I |
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°Ç½Ä ½Ä°¢ |
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Plasma Therm 790 Series
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PC Control System
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Oxide, Nitride, Polymer µî ½Ä°¢ °¡´É
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2, 4, 6 Inch ¹× ½ÃÆíÈ°¿ë°¡´É
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Toxic Gas »ç¿ë
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Chiler Cooling System |
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RIE II |
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°Ç½Ä ½Ä°¢ |
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Àåºñ¸í: Advenced RIE
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Á¦Á¶»ç: Advenced Vacuum & STS
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Chamber Size: 300mm
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°¡´É°øÁ¤ : Silicon Dioxide, Silicon Nitride Àü¿ë
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M2000 Laser °¡°ø±â |
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Laser °¡°ø |
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M-2000 Laser °¡°ø±â
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- Silicon Wafer ¹× Metal °¡°ø °¡´É.
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- Wafer Die Sawing °¡´É.
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(´Ü, Wafer Die Sawing½Ã CAD FileÀÌ ÇÊ¿äÇÔ [*.dxf]) |
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Microwave Plasma Asher |
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Microwave Plasma Asher |
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µ¶ÀÏ :Plasma Finish Àåºñ
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Èñ»ýÃþÀ¸·Î »ç¿ëµÇ´Â Æú¸®¸Ó(Æú¸®À̵̹å) Á¦°Å
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PR Á¦°Å ¸ðµÎ °¡´É |
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Ion Milling |
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RIE¥² |
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RIE¥² |
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°Ç½Ä½Ä°¢
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Àåºñ¸í: Reactive ion etching Plasma
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Á¦Á¶»ç: Oxford
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DEEP TRENCH RIE II |
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DEEP TRENCH RIE II |
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Deep Trench RIE
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- Silicon ½Ä°¢ Àü¿ëÀåºñ |
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Oxford-ICP II |
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Oxford-ICP Etcher(Cobra) |
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•¶Ù¾î³ ½Ä°¢ ±íÀÌ Á¦¾î·Î Á¤¹ÐÇÑ VCSEL ¸Þ»ç ½Ä°¢
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•LED ¶Ç´Â ·¹ÀÌÀú ¹× Àü¿ø ÀåÄ¡¿ë GaN ¿¡Äª
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•±¤ÀüÀÚ°øÇÐÀ» À§ÇÑ °í¼±Åüº GaAs/AlGaAs |
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