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E-beam Lithography |
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Nano Pattern ±¸Çö |
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Á¦Á¶»ç : Raith(µ¶ÀÏ)
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Model : Raith 150-TWO
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ILithography method:Device making and direct writing with vector scanning method.
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Substrate Size:4 inch diameter (Max) , 6 inch diameter (Max) or more7 inch Square (Max) LoadingAcceleration voltage:30§Ç
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Electron beam shape:Round with Gaussian distribution
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Electron beam diameter:2.0§¬¥õ(Min) or below
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Electron beam current:5¡¿10-13A ~ 2¡¿10-8A
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Minimum line width:20§¬ or below
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Electron current stability:1%/0.5hour or below
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Scanning field:900§¡¿900§,
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600§¡¿600§
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300§¡¿300§,
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150§¡¿150§
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75§¡¿75§
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or more
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Electron beam positioning:16 bit DAC or more
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Stitching accuracy:40§¬ (3¥ò) or below
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Overlay accuracy:40§¬ (3¥ò) or below
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Exposure area:X-150§®, Y-150§® or more: |
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Spin Coater3 |
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Spin Coater3 |
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¸ðµ¨¸í : EF-80P(Digital type) |
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EVG Aligner |
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EVG Aligner |
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*Á¶°¢½ÃÆí ¹× 4ÀÎÄ¡~8ÀÎÄ¡ Backside AlignÀü¿ë*
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Hard/Soft, Low Vacuum
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Vacuum contact
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UV Source 365/405 nm |
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°æ»ç³ë±¤±â |
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Àڿܼ±À» ³ë±¤ÇÏ´Â ±¤¿øºÎ¿Í ³ë±¤µÈ ÆÐÅÏÀÇ °Ë»ç ¹× Mask¿Í WaferÀÇ alignment¸¦ È®ÀÎÇÏ´Â °Ë»çºÎ WaferÀÇ À§Ä¡¸¦ Mask¿Í alignmentÇÏ°Ô ÇÏ´Â Alignment stageºÎ ±×¸®°í ±âŸ ¿µ»ó±¸ÇöºÎ·Î ±¸¼ºµÇ¾î ÀÖ´Â Àåºñ |
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Maskless |
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Maskless |
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Mask ¾øÀÌ GDS file ¸¸À¸·Î ÆÐÅÏ ±¸Çö
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Auto / Manual·Î alignment ÁøÇà
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Loading »çÀÌÁî : Á¶°¢(10 x 10 §® ¿Ü), ¿þÀÌÆÛ(4~8 inch)
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Minimum pixel size : 2§
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Resolution : 2§(Positive PR : t¡Â2§)
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Light source : LD(laser diode, 405§¬ 10W)
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(MA6)¥°Á¶°¢½ÃÆí |
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MA6 (Á¶°¢¹×backside align) |
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*Á¶°¢½ÃÆí ¹× 4ÀÎÄ¡~6ÀÎÄ¡ Backside AlignÀü¿ë*
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Hard/Soft, Low Vacuum
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Vacuum contact
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UV Source 365/405 nm
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(MA6)¥±4ÀÎÄ¡Àü¿ë |
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MA6 Aligner2(4inchÀü¿ë) |
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*4ÀÎÄ¡~6ÀÎÄ¡ Wafer Aligner*
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Hard/Soft, Low Vacuum
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Vacuum contact
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UV Source 365/405 nm
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SPIN COATER |
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PR COATER |
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AZ °è¿, PMER, SU8
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°í¼Ó ȸÀü½Ä Coater
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2 ~ 6 Inch Wafer
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Vacuum Chucking |
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