MICRO/NANO FABRICATION
 
 
 
         
 
 
E-beam Lithography
 
Nano Pattern ±¸Çö
Á¦Á¶»ç : Raith(µ¶ÀÏ)
Model : Raith 150-TWO
ILithography method:Device making and direct writing with vector scanning method.
Substrate Size:4 inch diameter (Max) , 6 inch diameter (Max) or more7 inch Square (Max) LoadingAcceleration voltage:30§Ç
Electron beam shape:Round with Gaussian distribution
Electron beam diameter:2.0§¬¥õ(Min) or below
Electron beam current:5¡¿10-13A ~ 2¡¿10-8A
Minimum line width:20§¬ or below
Electron current stability:1%/0.5hour or below
Scanning field:900§­¡¿900§­,
600§­¡¿600§­
300§­¡¿300§­,
150§­¡¿150§­
75§­¡¿75§­
or more
Electron beam positioning:16 bit DAC or more
Stitching accuracy:40§¬ (3¥ò) or below
Overlay accuracy:40§¬ (3¥ò) or below
Exposure area:X-150§®, Y-150§® or more:
       
 
Spin Coater3
 
Spin Coater3
¸ðµ¨¸í : EF-80P(Digital type)
       
 
EVG Aligner
 
EVG Aligner
*Á¶°¢½ÃÆí ¹× 4ÀÎÄ¡~8ÀÎÄ¡ Backside AlignÀü¿ë*
Hard/Soft, Low Vacuum
Vacuum contact
UV Source 365/405 nm
       
 
°æ»ç³ë±¤±â
 
Àڿܼ±À» ³ë±¤ÇÏ´Â ±¤¿øºÎ¿Í ³ë±¤µÈ ÆÐÅÏÀÇ °Ë»ç ¹× Mask¿Í WaferÀÇ alignment¸¦ È®ÀÎÇÏ´Â °Ë»çºÎ WaferÀÇ À§Ä¡¸¦ Mask¿Í alignmentÇÏ°Ô ÇÏ´Â Alignment stageºÎ ±×¸®°í ±âŸ ¿µ»ó±¸ÇöºÎ·Î ±¸¼ºµÇ¾î ÀÖ´Â Àåºñ
       
 
Maskless
 
Maskless
Mask ¾øÀÌ GDS file ¸¸À¸·Î ÆÐÅÏ ±¸Çö
Auto / Manual·Î alignment ÁøÇà
Loading »çÀÌÁî : Á¶°¢(10 x 10 §® ¿Ü), ¿þÀÌÆÛ(4~8 inch)
Minimum pixel size : 2§­
Resolution : 2§­(Positive PR : t¡Â2§­)
Light source : LD(laser diode, 405§¬ 10W)
       
 
(MA6)¥°Á¶°¢½ÃÆí
 
MA6 (Á¶°¢¹×backside align)
*Á¶°¢½ÃÆí ¹× 4ÀÎÄ¡~6ÀÎÄ¡ Backside AlignÀü¿ë*
Hard/Soft, Low Vacuum
Vacuum contact
UV Source 365/405 nm
       
 
(MA6)¥±4ÀÎÄ¡Àü¿ë
 
MA6 Aligner2(4inchÀü¿ë)
*4ÀÎÄ¡~6ÀÎÄ¡ Wafer Aligner*
Hard/Soft, Low Vacuum
Vacuum contact
UV Source 365/405 nm
       
 
SPIN COATER
 
PR COATER
AZ °è¿­, PMER, SU8
°í¼Ó ȸÀü½Ä Coater
2 ~ 6 Inch Wafer
Vacuum Chucking